Detecting striations via the lateral photovoltage scanning method without screening effect

Abstract The lateral photovoltage scanning method (LPS) detects doping inhomogeneities in semiconductors such as Si, Ge and $${\hbox {Si}_{\hbox {x}}\hbox {Ge}_{1-\hbox {x}}}$$ Si x Ge 1 - a cheap, fast nondestructive manner. LPS relies on the bulk photovoltaic effect thus can detect any physical quantity affecting band profiles of sample. finite volume simulation using commercial software suffer from long times convergence instabilities. We present here an open-source for 2D Si sample simulator. For low injection conditions we show that voltage is proportional to gradient. higher conditions, directly how gradient differ link lower local resolution screening effect. Previously, loss was assumed be only connected enlargement excess charge carrier distribution.